2SC1162 2.5a , 35v npn plastic encapsulated transistor elektronische bauelemente 07-mar-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? base ? ? emitte r collector ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low frequency power amplifier classification of h fe (1) product-rank 2SC1162-b 2SC1162-c 2SC1162-d range 60~120 100~200 160~320 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 35 v collector to emitter voltage v ceo 35 v emitter to base voltage v ebo 5 v collector current - continuous i c 2.5 a collector power dissipation p c 750 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 35 - - v i c =1ma, i e =0 collector to emitter breakdown voltage v (br)ceo 35 - - v i c =10ma, i b =0 emitter to base br eakdown voltage v (br)ebo 5 - - v i e =1ma, i c =0 collector cut ? off current i cbo - - 20 a v cb =35v, i e =0 emitter cut ? off current i ebo - - 20 a v eb =5v, i c =0 dc current gain h fe (1) 60 - 320 v ce =2v, i c =0.5a h fe (2) 20 - - v ce =2v, i c =1.5a* collector to emitter saturation voltage v ce(sat) - - 1 v i c =2a, i b =200ma transition frequency f t - 180 - mhz v ce =2v, i c =200ma collector output capacitance v be - - 1.5 v v ce =2v, i c =1.5a *pulse test ? emitte r ? collector ? base to-126 c d b a e n f l g k j h m ref. millimete r ref. millimete r min. max. min. max. a 7.40 7.80 h 1.10 1.50 b 2.50 2.90 j 0.45 0.60 c 10.60 11.00 k 0.66 0.86 d 15.30 15.70 l 2.10 2.30 e 3.70 3.90 m 1.17 1.37 f 3.90 4.10 n 3.00 3.20 g2.29 typ.
2SC1162 2.5a , 35v npn plastic encapsulated transistor elektronische bauelemente 07-mar-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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